120-GBaud 16-QAM silicon photonics IQ modulator for data center interconnection.

We demonstrated all-silicon IQ modulators (IQMs) operating at 120-GBaud 16-QAM with suitable bandwidth, and output power. We required optical signal-to-noise-ratio (rOSNR) that have promising potential to be used in 800-Gbps small-form-factor pluggable transceivers for data center interconnection. First, we tested an IQM chip using discrete drivers and achieved a per-polarization TX output power of -18.74 dBm and an rOSNR of 23.51 dB over a 100-km standard SMF. Notably, a low BER of 1.4e-3 was obtained using our SiP IQM chip without employing nonlinear compensation, optical equalization, or an ultra-wide-bandwidth, high-ENOB OMA. Furthermore, we investigated the performance of a 3D packaged transmitter by emulating its frequency response using an IQM chip, discrete drivers, and a programmable optical filter. With a laser power of 17 dBm, we achieved a per-polarization output power of -15.64 dBm and an rOSNR of 23.35 dB.

Experimental demonstration of coherent perfect absorption in a silicon photonic racetrack resonator.

We present the first experimental demonstration of coherent perfect absorption (CPA) in an integrated device using a silicon racetrack resonator at telecommunication wavelengths. Absorption in the racetrack is achieved by Si+-ion-implantation, allowing for phase controllable amplitude modulation at the resonant wavelength. The device is measured to have an extinction of 24.5 dB and a quality-factor exceeding 3000. Our results will enable integrated CPA devices for data modulation and detection.

Monolithic silicon waveguide photodiode utilizing surface-state absorption and operating at 10 Gb/s.

We have fabricated a waveguide integrated monolithic silicon infrared detector. The photodiode consists of a p-i-n junction across a silicon-on-insulator (SOI) rib waveguide. Absorption is due to surface-states at the silicon/air interface of the waveguide. A 2 mm long detector shows a response of 0.045 A/W (calculated as a function of coupled light) and is capable of operation at 10 Gb/s at a reverse bias voltage of 2 V.

10 Gbps silicon waveguide-integrated infrared avalanche photodiode.

We have fabricated monolithic silicon avalanche photodiodes capable of 10 Gbps operation at a wavelength of 1550 nm. The photodiodes are entirely CMOS process compatible and comprise a p-i-n junction integrated with a silicon-on-insulator (SOI) rib waveguide. Photo-generation is initiated via the presence of deep levels in the silicon bandgap, introduced by ion implantation and modified by subsequent annealing. The devices show a small signal 3 dB bandwidth of 2.0 GHz as well as an open eye pattern at 10 Gbps. A responsivity of 4.7 ± 0.5 A/W is measured for a 600 µm device at a reverse bias of 40 V.

Demonstration of a wavelength monitor comprised of racetrack-ring resonators with defect mediated photodiodes operating in the C-band.

A CMOS compatible wavelength monitor comprised of two thermally tuned racetrack-ring resonators with defect mediated photodiode structures is experimentally demonstrated in monolithic silicon. Each resonator is independently tuned so as to determine an unknown input wavelength by tuning the resonance peak locations until there is overlap between the two comb spectra. The presence of two of these resonator/heater components, each with a different free spectral range, increases the unambiguous measurement range when compared to one component used on its own.

Integrated thermal stabilization of a microring modulator.

A defect-enhanced silicon photodiode and heater are integrated with and used to thermally stabilize a microring modulator. These optoelectronic components are interfaced with external control circuitry to create a closed-looped feedback system for thermally stabilizing the microring modulator. The thermal stabilization system enables the microring modulator to provide error-free 5-Gb/s modulation while being subjected to thermal fluctuations that would normally render it inoperable.